This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations.The text concentrates on silicon and gallium a… Plus…
This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations.The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes.The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed.This book contains details of models for both equilibrium and non-equilibrium transport conditions.The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included.A section on modern quantum transport analysis techniques is included.Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.; PDF; Scientific, Technical and Medical > Physics > States of matter > Condensed matter physics, World Scientific Publishing Company<
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No. 9789814507912. Frais d'envoiInstock, Despatched same working day before 3pm, zzgl. Versandkosten., Livraison non-comprise Details...
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This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations.The text concentrates on silicon and gallium a… Plus…
This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations.The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes.The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed.This book contains details of models for both equilibrium and non-equilibrium transport conditions.The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included.A section on modern quantum transport analysis techniques is included.Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.; PDF; Scientific, Technical and Medical > Physics > States of matter > Condensed matter physics, World Scientific Publishing Company<
No. 9789814507912. Frais d'envoiInstock, Despatched same working day before 3pm, zzgl. Versandkosten., Livraison non-comprise
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Informations détaillées sur le livre - Introduction To Semiconductor Device Modelling
EAN (ISBN-13): 9789814507912 Editeur: World Scientific Publishing Company
Livre dans la base de données depuis 2023-02-08T22:59:56+01:00 (Paris) Page de détail modifiée en dernier sur 2023-02-08T23:01:32+01:00 (Paris) ISBN/EAN: 9789814507912
ISBN - Autres types d'écriture: 978-981-4507-91-2
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