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Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations - Rui-Qin Zhang
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Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations - Livres de poche

2013, ISBN: 3642409040

[EAN: 9783642409042], Neubuch, [SC: 0.0], [PU: Springer Berlin Heidelberg], ELECTRONTRANSPORT; ENERGYBANDSTRUCTURES; STRUCTURALSTABILITY; SURFACEENGINEERING; SILICONNANOWIRES; GROWTHMECHA… Plus…

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Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations  Rui-Qin Zhang  Taschenbuch  SpringerBriefs in Molecular Science  Paperback  Englisch  2013 - Zhang, Rui-Qin
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Zhang, Rui-Qin:

Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations Rui-Qin Zhang Taschenbuch SpringerBriefs in Molecular Science Paperback Englisch 2013 - Livres de poche

2013, ISBN: 9783642409042

[ED: Taschenbuch], [PU: Springer Berlin], In this volume, Prof. Zhang reviews the systematic theoretical studies in his group on the growth mechanisms and properties of silicon quantum do… Plus…

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Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations - Livres de poche

ISBN: 9783642409042

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In this volume, Prof. Zhang reviews the systematic theoretical studies in his group on the growth mechanisms and properties of silicon quantum dots, nanotubes and nanowires, including: me… Plus…

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Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations - Livres de poche

2013, ISBN: 9783642409042

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EAN (ISBN-13): 9783642409042
ISBN (ISBN-10): 3642409040
Version reliée
Livre de poche
Date de parution: 2013
Editeur: Springer Berlin

Livre dans la base de données depuis 2014-03-11T15:22:05+01:00 (Paris)
Page de détail modifiée en dernier sur 2022-06-04T12:35:52+02:00 (Paris)
ISBN/EAN: 9783642409042

ISBN - Autres types d'écriture:
3-642-40904-0, 978-3-642-40904-2
Autres types d'écriture et termes associés:
Auteur du livre: qin, rui
Titre du livre: calc, silicon, novel, cal, mechanica, mechanical properties, qin, zhang


Données de l'éditeur

Auteur: Rui-Qin Zhang
Titre: SpringerBriefs in Molecular Science; Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations
Editeur: Springer; Springer Berlin
66 Pages
Date de parution: 2013-12-05
Berlin; Heidelberg; DE
Imprimé / Fabriqué en
Poids: 1,299 kg
Langue: Anglais
53,49 € (DE)
54,99 € (AT)
59,00 CHF (CH)
POD
VIII, 66 p. 31 illus., 15 illus. in color.

BC; Theoretical and Computational Chemistry; Hardcover, Softcover / Chemie/Theoretische Chemie; Quanten- und theoretische Chemie; Verstehen; Chemie; Electron Transport; Energy Band Structures; Growth Mechanism; Phonon Transport; Silicon Nanotubes; Silicon Nanowires; Silicon Quantum Dots; Silicon nanostructure; Structural Stability; Surface engineering; Nanotechnology; Nanoscale Science and Technology; Characterization and Evaluation of Materials; Theoretical Chemistry; Nanotechnology; Nanophysics; Characterization and Analytical Technique; Nanotechnologie; Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik); Nanowissenschaften; Werkstoffprüfung; EA

In this volume, Prof. Zhang reviews the systematic theoretical studies in his group on the growth mechanisms and properties of silicon quantum dots, nanotubes and nanowires, including: mechanisms of oxide-assisted growth of silicon nanowires, energetic stability of pristine silicon nanowires and nanotubes, thermal stability of hydrogen terminated silicon nanostructures, size-dependent oxidation of hydrogen terminated silicon nanostructures, excited-state relaxation of hydrogen terminated silicon nanodots, and direct-indirect energy band transitions of silicon nanowires and sheets by surface engineering and straining. He also discusses the potential applications of these findings. This book will mainly benefit those members of the scientific and research community working in nanoscience, surface science, nanomaterials and related fields.

Introduction.- Growth mechanism of silicon nanowires.- Stability of silicon nanostructures.- Novel electronic properties of silicon nanostructures.- Summary and remarks.

Prof. Zhang is currently a professor at the Department of Physics and Materials Science, City University of Hong Kong. Prof. Zhang’s research area is Computational Materials Physics and Chemistry, including: (1) energetics, kinetics and dynamics of materials nucleation and growth; (2) nano- and micro-structures and related properties of systems in materials science, surface science and chemistry; and (3) development of related methodologies and theories. His recent research focus is on nanoscience, including interactions of nanomaterials with chemical and biological systems, aiming at promoting the applications of nanostructured materials in energy-related and chemical, biological and environmental areas. He has published over 260 papers in internationally refereed journals and 5 book chapters in the areas of Chemical Physics, Materials Science, Condensed Matter Physics and Surface Science. His work has been cited more than 4000 times and his H-index has reached 32. Prof. Zhang has been honored with (1) a Third-class State Natural Science Award of China in 1997, (2) a First-class Award of Scientific and Technological Development of China in 1997, (3) a Friedrich Wilhelm Bessel Research Award (http://www.avh.de/en/programme/preise/index.htm) from the Alexander von Humboldt Foundation, Germany in 2004, and (4) a Second-class State Natural Science Award of China in 2005.

Comprehensively shows the growth mechanisms and properties of silicon nanostructures

Covers computational studies that address different aspects of the science and technology of silicon nanostructures

Includes silicon quantum dots, nanotubes and nanowires

Provides an atomic-level understanding of oxide-assisted growth and possible novel property engineering approaches for silicon nanostructures

Includes supplementary material: sn.pub/extras



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