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SiO2 in Si Microdevices - Itsumi, Manabu
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Itsumi, Manabu:
SiO2 in Si Microdevices - Livres de poche

2010, ISBN: 3642077668, Lieferbar binnen 4-6 Wochen Frais d'envoiVersandkostenfrei innerhalb der BRD

ID: 9783642077661

Internationaler Buchtitel. In englischer Sprache. Verlag: Springer-Verlag GmbH, Paperback, 340 Seiten, L=235mm, B=155mm, H=18mm, Gew.=515gr, [GR: 16830 - HC/Maschinenbau/Fertigungstechnik], Kartoniert/Broschiert, Klappentext: Electronic systems and digital computers are indispensable elements of modern multimedia technologies and the Internet society. But their explosive advance would not have been possible without the extraordinary progress in VLSI technology using high-quality SiO2. This volume addresses the thin gate oxides involved in the individual processes in fabrication, e.g. the growth, cleaning and thermal oxidation of silicon, metal interconnect formation, and photolithography. It describes new methods for observing defects in SiO2 as well as novel approaches to eliminating such defects. The book will be a valuable resource for all materials scientists and engineers seeking to further advance the quality of silicon microdevices. Electronic systems and digital computers are indispensable elements of modern multimedia technologies and the Internet society. But their explosive advance would not have been possible without the extraordinary progress in VLSI technology using high-quality SiO2. This volume addresses the thin gate oxides involved in the individual processes in fabrication, e.g. the growth, cleaning and thermal oxidation of silicon, metal interconnect formation, and photolithography. It describes new methods for observing defects in SiO2 as well as novel approaches to eliminating such defects. The book will be a valuable resource for all materials scientists and engineers seeking to further advance the quality of silicon microdevices.

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SiO2 in Si Microdevices

Electronic systems and digital computers are indispensable elements of modern multimedia technologies and the Internet society. But their explosive advance would not have been possible without the extraordinary progress in VLSI technology using high-quality SiO2. This volume addresses the thin gate oxides involved in the individual processes in fabrication, e.g. the growth, cleaning and thermal oxidation of silicon, metal interconnect formation, and photolithography. It describes new methods for observing defects in SiO2 as well as novel approaches to eliminating such defects. The book will be a valuable resource for all materials scientists and engineers seeking to further advance the quality of silicon microdevices.

Informations détaillées sur le livre - SiO2 in Si Microdevices


EAN (ISBN-13): 9783642077661
ISBN (ISBN-10): 3642077668
Livre de poche
Date de parution: 2010
Editeur: Springer-Verlag GmbH
340 Pages
Poids: 0,515 kg
Langue: eng/Englisch

Livre dans la base de données depuis 06.02.2011 16:26:26
Livre trouvé récemment le 06.02.2011 16:26:26
ISBN/EAN: 9783642077661

ISBN - Autres types d'écriture:
3-642-07766-8, 978-3-642-07766-1


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