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Simulation of MOSFETs BJTs and JFETs - Xuan Yang
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Xuan Yang:
Simulation of MOSFETs BJTs and JFETs - Livres de poche

ISBN: 9783847323457

[ED: Taschenbuch], [PU: LAP Lambert Academic Publishing], Neuware - Semiconductor devices are generally analyzed with relatively simple equations or with detailed computer simulations. Most text-books use these simple equations and show device diagrams that are frequently very simplified and occasionally incorrect. For example, the carrier densities near the pinch-off point in MOSFETs and JFETs and the minority carrier density in the base near the reverse-biased base-collector junction are frequently assumed to be zero or near zero. Also the channel thickness at the pinch-off point is often shown to approach zero. None of these assumptions can be correct. The research in this book addresses these points. These simulation results in this book provide a more complete understanding of device physics and device operation in those regions usually not addressed in semiconductor device physics books., DE, [SC: 2.00], Neuware, gewerbliches Angebot, 220x150x6 mm, 100, [GW: 165g], PayPal, offene Rechnung, Banküberweisung, sofortueberweisung.de, Interntationaler Versand

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Simulation of MOSFETs BJTs and JFETs - Xuan Yang
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Xuan Yang:
Simulation of MOSFETs BJTs and JFETs - Livres de poche

2012, ISBN: 3847323458

ID: 22506472948

[EAN: 9783847323457], Neubuch, [PU: LAP Lambert Academic Publishing Jan 2012], Neuware - Semiconductor devices are generally analyzed with relatively simple equations or with detailed computer simulations. Most text-books use these simple equations and show device diagrams that are frequently very simplified and occasionally incorrect. For example, the carrier densities near the pinch-off point in MOSFETs and JFETs and the minority carrier density in the base near the reverse-biased base-collector junction are frequently assumed to be zero or near zero. Also the channel thickness at the pinch-off point is often shown to approach zero. None of these assumptions can be correct. The research in this book addresses these points. These simulation results in this book provide a more complete understanding of device physics and device operation in those regions usually not addressed in semiconductor device physics books. 100 pp. Englisch

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Simulation of Mosfets Bjts and Jfets - Xuan Yang
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Xuan Yang:
Simulation of Mosfets Bjts and Jfets - Livres de poche

ISBN: 9783847323457

Paperback, [PU: LAP Lambert Academic Publishing], Semiconductor devices are generally analyzed with relatively simple equations or with detailed computer simulations. Most text-books use these simple equations and show device diagrams that are frequently very simplified and occasionally incorrect. For example, the carrier densities near the pinch-off point in MOSFETs and JFETs and the minority carrier density in the base near the reverse-biased base-collector junction are frequently assumed to be zero or near zero. Also the channel thickness at the pinch-off point is often shown to approach zero. None of these assumptions can be correct. The research in this book addresses these points. These simulation results in this book provide a more complete understanding of device physics and device operation in those regions usually not addressed in semiconductor device physics books., Electronics Engineering

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Simulation of MOSFETs BJTs and JFETs: at and near the Pinch-off Region - Xuan Yang, Dieter K. Schroder
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Xuan Yang, Dieter K. Schroder:
Simulation of MOSFETs BJTs and JFETs: at and near the Pinch-off Region - Livres de poche

ISBN: 3847323458

Taschenbuch, [EAN: 9783847323457], LAP LAMBERT Academic Publishing, LAP LAMBERT Academic Publishing, Book, [PU: LAP LAMBERT Academic Publishing], LAP LAMBERT Academic Publishing, 60525011, Elektronik, 60516011, Elektrotechnik, 60448011, Ingenieurwesen & Technik, 60447011, Architektur, Technik & Ingenieurswesen, 54071011, Genres, 52044011, Fremdsprachige Bücher, 56441011, Technologie, 56447011, Erneuerbare Energien, 56448011, Innovationen, 1320311031, Nachschlagewerke, 56444011, Nanotechnologie, 56449011, Philosophie der Technologie, 56445011, Risiken, 56446011, Sicherheit & Gesundheit, 273011011, Soziale Aspekte, 54518011, Technisches Denken & Schreiben, 56451011, Technologie & Gesellschaft, 56211011, Technologiegeschichte, 56442011, Zukunftsforschung, 56047011, Wissenschaft, 54071011, Genres, 52044011, Fremdsprachige Bücher

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Simulation of MOSFETs BJTs and JFETs: at and near the Pinch-off Region - Xuan Yang, Dieter K. Schroder
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Xuan Yang, Dieter K. Schroder:
Simulation of MOSFETs BJTs and JFETs: at and near the Pinch-off Region - Livres de poche

ISBN: 3847323458

Taschenbuch, [EAN: 9783847323457], LAP LAMBERT Academic Publishing, LAP LAMBERT Academic Publishing, Book, [PU: LAP LAMBERT Academic Publishing], LAP LAMBERT Academic Publishing, 60525011, Elektronik, 60516011, Elektrotechnik, 60448011, Ingenieurwesen & Technik, 60447011, Architektur, Technik & Ingenieurswesen, 54071011, Genres, 52044011, Fremdsprachige Bücher, 56441011, Technologie, 56447011, Erneuerbare Energien, 56448011, Innovationen, 1320311031, Nachschlagewerke, 56444011, Nanotechnologie, 56449011, Philosophie der Technologie, 56445011, Risiken, 56446011, Sicherheit & Gesundheit, 273011011, Soziale Aspekte, 54518011, Technisches Denken & Schreiben, 56451011, Technologie & Gesellschaft, 56211011, Technologiegeschichte, 56442011, Zukunftsforschung, 56047011, Wissenschaft, 54071011, Genres, 52044011, Fremdsprachige Bücher

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EAN (ISBN-13): 9783847323457
ISBN (ISBN-10): 3847323458
Version reliée
Livre de poche
Date de parution: 2012
Editeur: AV Akademikerverlag GmbH & Co. KG.

Livre dans la base de données depuis 25.06.2007 14:07:33
Livre trouvé récemment le 20.09.2017 19:20:36
ISBN/EAN: 3847323458

ISBN - Autres types d'écriture:
3-8473-2345-8, 978-3-8473-2345-7


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