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Iii-nitride Semiconductor Materials - Zhe Chuan Feng
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Zhe Chuan Feng:
Iii-nitride Semiconductor Materials - edition reliée, livre de poche

2006, ISBN: 1860946364

[SR: 8431660], Hardcover, [EAN: 9781860946363], Imperial College Press, Imperial College Press, Book, [PU: Imperial College Press], 2006-03-20, Imperial College Press, III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals., 278020, Physical Chemistry, 278004, Chemistry, 57, Science & Nature, 1025612, Subjects, 266239, Books, 922290, Electrical Engineering, 278150, Electrical, 278115, Engineering & Technology, 57, Science & Nature, 1025612, Subjects, 266239, Books, 278160, Electronics Engineering, 278161, Applied Optics, 278166, Automatic Control, 278169, Circuits, 278170, Digital Electronics, 278141, Electronics & Communications Engineering, 278115, Engineering & Technology, 57, Science & Nature, 1025612, Subjects, 266239, Books, 922390, Engineering Physics, 278115, Engineering & Technology, 57, Science & Nature, 1025612, Subjects, 266239, Books, 278340, Differential Equations, 278337, Calculus & Mathematical Analysis, 278320, Mathematics, 57, Science & Nature, 1025612, Subjects, 266239, Books, 922942, Maths, 922868, Popular Science, 57, Science & Nature, 1025612, Subjects, 266239, Books, 571500, Electrical Engineering, 564346, Engineering, 564334, Scientific, Technical & Medical, 1025612, Subjects, 266239, Books, 571046, Electronics & Telecommunications Engineering, 564346, Engineering, 564334, Scientific, Technical & Medical, 1025612, Subjects, 266239, Books, 564352, Mathematics, 570902, Algebra, 570874, Applied Mathematics, 570912, Calculus & Mathematical Analysis, 570934, Combinatorics & Graph Theory, 570936, Geometry, 570964, Mathematical Theory, 564334, Scientific, Technical & Medical, 1025612, Subjects, 266239, Books

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III-Nitride Semiconductor Materials - Feng, Zhe Chuan
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Feng, Zhe Chuan:
III-Nitride Semiconductor Materials - nouveau livre

2014, ISBN: 9781860946363

ID: 1681602

III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals. Sample Chapter(s). Chapter 1: Hydride Vapor Phase Epitaxy of Group III Nitride Materials (540 KB). Contents: Hydride Vapor Phase Epitaxy of Group III Nitride Materials (V Dmitriev & A Usikov); Planar MOVPE Technology for Epitaxy of III-Nitride Materials (M Dauelsberg et al.); Close-Coupled Showerhead MOCVD Technology for the Epitaxy of GaN and Related Materials (E J Thrush & A R Boyd); Molecular Beam Epitaxy for III-N Materials (H Tang & J Webb); Growth and Properties of Nonpolar GaN Films and Heterostructures (Y J Sun & O Brandt); Indium-Nitride Growth by High-Pressure CVD: Real-Time and Ex-Situ Characterization (N Dietz); A New Look on InN (L-W Tu et al.); Growth and Optical/Electrical Properties of Al x Ga 1-x N Alloys in the Full Composition Range (F Yun); Optical Investigation of InGaN/GaN Quantum Well Structures Grown by MOCVD (T Wang); Clustering Nanostructures and Optical Characteristics in InGaN/GaN Quantum-Well Structures with Silicon Doping (Y-C Cheng et al.); III-Nitrides Micro- and Nano-Structures (H M Ng & A Chowdhury); New Developments in Dilute Nitride Semiconductor Research (W Shan et al.). Readership: Scientists; material growers and evaluators; device design, processing engineers; postgraduate and graduate students in electrical & electronic engineering and materials engineering. Technology Technology eBook, World Scientific Publishing Company

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III-Nitride Semiconductor Materials - Feng, Zhe Chuan (ed.)
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Feng, Zhe Chuan (ed.):
III-Nitride Semiconductor Materials - edition reliée, livre de poche

ISBN: 9781860946363

[ED: Hardcover], [PU: WORLD SCIENTIFIC PUB CO INC], III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals. Content: - Hydride Vapor Phase Epitaxy of Group III Nitride Materials (V Dmitriev & A Usikov) - Planar MOVPE Technology for Epitaxy of III-Nitride Materials (M Dauelsberg et al.) - Close-Coupled Showerhead MOCVD Technology for the Epitaxy of GaN and Related Materials (E J Thrush & A R Boyd) - Molecular Beam Epitaxy for III-N Materials (H Tang & J Webb) - Growth and Properties of Nonpolar GaN Films and Heterostructures (Y J Sun & O Brandt) - Indium-Nitride Growth by High-Pressure CVD: Real-Time and Ex-Situ Characterization (N Dietz) - A New Look on InN (L-W Tu et al.) - Growth and Optical/Electrical Properties of AlxGa1-xN Alloys in the Full Composition Range (F Yun) - Optical Investigation of InGaN/GaN Quantum Well Structures Grown by MOCVD (T Wang) - Clustering Nanostructures and Optical Characteristics in InGaN/GaN Quantum-Well Structures with Silicon Doping (Y-C Cheng et al.) - III-Nitrides Micro- and Nano-Structures (H M Ng & A Chowdhury) - New Developments in Dilute Nitride Semiconductor Research (W Shan et al.) 440 pages Versandfertig in 2-4 Wochen, DE, [SC: 0.00], Neuware, gewerbliches Angebot, offene Rechnung (Vorkasse vorbehalten)

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Iii-nitride Semiconductor Materials - Feng, Zhe Chuan (Editor)
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Feng, Zhe Chuan (Editor):
Iii-nitride Semiconductor Materials - edition reliée, livre de poche

2006, ISBN: 1860946364

ID: 18728078533

[EAN: 9781860946363], Neubuch, [PU: Imperial College Pr], Technology|Electricity, Technology|Electronics|Semiconductors, new title edition. 440 pages. 9.00x6.25x1.25 inches. In Stock.

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Iii-nitride Semiconductor Materials - Zhe Chuan Feng
Livre non disponible
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Zhe Chuan Feng:
Iii-nitride Semiconductor Materials - edition reliée, livre de poche

2006, ISBN: 9781860946363

ID: 7367477

Hardcover, Buch, [PU: Imperial College Press]

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Détails sur le livre
III-Nitride Semiconductor Materials

III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals.

Informations détaillées sur le livre - III-Nitride Semiconductor Materials


EAN (ISBN-13): 9781860946363
ISBN (ISBN-10): 1860946364
Version reliée
Date de parution: 2006
Editeur: WORLD SCIENTIFIC PUB CO (
428 Pages
Poids: 0,771 kg
Langue: eng/Englisch

Livre dans la base de données depuis 03.01.2008 10:04:56
Livre trouvé récemment le 28.11.2017 17:14:03
ISBN/EAN: 1860946364

ISBN - Autres types d'écriture:
1-86094-636-4, 978-1-86094-636-3


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