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Perspectives, Science and Technologies for Novel Silicon on Insulator Devices - Hemment, Peter L.F. Lysenko, Vladimir S. Nazarov, Alexei N.
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Perspectives, Science and Technologies for Novel Silicon on Insulator Devices - Première édition

1999, ISBN: 9780792361176

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Hemment, Peter L F (Editor), and Lysenko, Vladimir S (Editor), and Nazarov, Alexei N (Editor):
Perspectives, Science and Technologies for Novel Silicon on Insulator Devices (Nato Science Partnership Subseries: 3, 73) - Livres de poche

1999

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Peter L. F. Hemment, Vladimir S. Lysenko et Alexei N. Nazarov:
Perspectives, Science and Technologies for Novel Silicon on Insulator Devices - Livres de poche

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Hemment, Peter L.F. [Editor]; Lysenko, Vladimir S. [Editor]; Nazarov, Alexei N. [Editor];:
Perspectives, Science and Technologies for Novel Silicon on Insulator Devices (Nato Science Partnership Subseries: 3) - Livres de poche

ISBN: 9780792361176

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Perspectives Science and Technologies for Novel Silicon on Insulator Devices

This concise volume contains the key papers presented during the International NATO Advanced Research Workshop on Silicon on Insulator device technologies. The authors have moved beyond reporting the current state of the technology to explore wider issues, from the economic aspects incorporating SOI and related materials into circuits and systems to consideration of low temperature electronics, quantum devices and MEMS. Readership: Postgraduate and professional engineers and researchers in the major silicon manufacturing companies, universities and research institutes.

Informations détaillées sur le livre - Perspectives Science and Technologies for Novel Silicon on Insulator Devices


EAN (ISBN-13): 9780792361176
ISBN (ISBN-10): 0792361172
Livre de poche
Date de parution: 1999
Editeur: Springer Netherlands
368 Pages
Poids: 0,556 kg
Langue: eng/Englisch

Livre dans la base de données depuis 2007-04-06T04:57:28+02:00 (Paris)
Page de détail modifiée en dernier sur 2023-07-15T18:13:24+02:00 (Paris)
ISBN/EAN: 0792361172

ISBN - Autres types d'écriture:
0-7923-6117-2, 978-0-7923-6117-6
Autres types d'écriture et termes associés:
Auteur du livre: vladimir nazarov, lysenko, peter will
Titre du livre: perspectives, silicon insulator technology, kyiv, devices wonder, science and technologie


Données de l'éditeur

Auteur: Peter L.F. Hemment; Vladimir S. Lysenko; Alexei N. Nazarov
Titre: NATO Science Partnership Subseries: 3; Perspectives, Science and Technologies for Novel Silicon on Insulator Devices
Editeur: Springer; Springer Netherland
344 Pages
Date de parution: 1999-12-31
Dordrecht; NL
Poids: 1,140 kg
Langue: Anglais
53,49 € (DE)
54,99 € (AT)
59,00 CHF (CH)
POD
XXII, 344 p.

BC; Electronics and Microelectronics, Instrumentation; Hardcover, Softcover / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik; Elektronik; Verstehen; CMOS; Laser; Sensor; Transistor; development; electronics; field-effect transistor; metal oxide semiconductur field-effect transistor; microelectromechanical system (MEMS); modeling; simulation; static-induction transistor; thin film; thin film transistor; Optical and Electronic Materials; Solid State Physics; Spectroscopy and Microscopy; Electrical Engineering; Mechanical Engineering; Electronics and Microelectronics, Instrumentation; Optical Materials; Condensed Matter Physics; Spectroscopy; Electrical and Electronic Engineering; Mechanical Engineering; Technische Anwendung von elektronischen, magnetischen, optischen Materialien; Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik); Spektroskopie, Spektrochemie, Massenspektrometrie; Elektrotechnik; Maschinenbau; BB

Preface. Committee Members. Invited Speakers. Workshop Photographs. Section 1: Innovations in Materials Technologies. 1.1. SMART-CUT® Technology: Basic Mechanisms and Applications; M. Bruel. 1.2. Polish Stop Technology for Silicon on Silicide on Insulator Structures; H.S. Gamble. 1.3. Homoepitaxy on Porous Silicon with a Buries Oxide Layer; Full-Wafer Scale SOI; S.I. Romanov, et al. 1.4. Structural and Electrical Properties of Silicon on Isolator Structures Manufactured on FZ- and CZ-Silicon by SMART-CUT Technology; V.P. Popov, et al. 1.5. Development of Linear Sequential Lateral Solidification Technique to Fabricate Quasi-Single-Crystal Super-Thin Si Films for High-Performance Thin Film Transistor Devices; A.B. Limanov, et al. Section 2: Economics and Innovation Applications. 2.1. Low Temperature Polysilicon Technology: A Low Cost SOI Technology? F. Plais, et al. 2.2. A Novel Low Cost Process for the Production of Semiconductor Polycrystalline Silicon from Recycled Industrial Waste; B.N. Mukashev, et al. 2.3. Tetrahedrally Bonded Amorphous Carbon for Electronic Applications; W.I. Milne. 2.4. Diamond Based Silicon-on-Insulator Materials and Devices; S. Bengtsson, M. Bergh. 2.5. Low-Temperature Processing of Crystalline Si Films on Glass for Electronic Applications; R.B. Bergmann, et al. 2.6. beta-SiC on SiO2 Formed by Ion Implantation and Bonding for Micromechanics Applications; C. Serre, et al. 2.7. Laser Recrystallized Polysilicon Layers for Sensor Applications: Electrical Piezoresistive Characterization; A.A. Druzhinin, et al. Section 3: CharacterisationMethods for SOI. 3.1. Optical Spectroscopy of SOI Materials; A. Pérez-Rodríguez, et al. 3.2. Computer Simulation of Oxygen Redistribution in SOI Structures; V.G. Litovchenko, A.A. Efremov. 3.3. Electrical Instabilities in Silicon-on-Insulator Structures and Devices During Voltage and Temperature Stressing; A.N. Nazarov, et al. 3.4. Hydrogen as a Diagnostic Tool in Analysing SOI Structures; A. Boutry-Forveille, et al. 3.5. Back Gate Voltage Influence on the LDD SOI NMOSFET Series Resistance Extraction from 150 to 300 K; A.S. Nicolett, et al. 3.6. Characterization of Porous Silicon Layers Containing a Buried Oxide Layer; S.I. Romanov, et al. 3.7. Total-Dose Radiation Response of Multilayer Buried Insulators; A.N. Rudenko, et al. 3.8. Recombination Current in Fully-Depleted SOI Diodes: Compact Model and Lifetime Extraction; T. Ernst, et al. 3.9. Investigation of the Structural and Chemical Properties of SOI Materials by Ellipsometry; L.A. Zabashta, et al. 3.10. Experimental Investigation and Modeling of Coplanar Transmission Lines on SOI Technologies for RF Applications; J. Lescot, et al. Section 4: Perspectives for SOI Structures and Devices. 4.1. Perspectives of Silicon-on-Insulator Technologies for Cryogenic Electronics; C. Claeys, et al. 4.2. SOI CMOS for High-Temperature Applications; J.P. Colinge. 4.3. Quantum Effect Devices on SOI Substrates with an Ultrathin Silicon Layer; Y. Omura. 4.4. Wafer Bonding for Micro-ElectroMechanical Systems (MEMS); C.A. Colinge. 4.5. A Com
Proceedings of the NATO Advanced Research Workshop, Kiev, Ukraine, 12-15 October 1998

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