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Frontiers of High Pressure Research II: Application of High Pressure to Low-Dimensional Novel Electronic Materials: 48 (NATO Science Series II: Mathematics, Physics and Chemistry, 48)
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Frontiers of High Pressure Research II: Application of High Pressure to Low-Dimensional Novel Electronic Materials: 48 (NATO Science Series II: Mathematics, Physics and Chemistry, 48) - edition reliée, livre de poche

2001, ISBN: 9781402001598

Editor: Hochheimer, Hans D. Editor: Kuchta, Bogdan, Editor: Dorhout, Peter K. Editor: Yarger, Jeffery L. Springer, Hardcover, Auflage: 2001, 578 Seiten, Publiziert: 2001-12-31T00:00:01Z, … Plus…

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Frontiers of High Pressure Research II: Application of High Pressure to Low-Dimensional Novel Electronic Materials (NATO Science Series II: Mathematics, Physics and Chemistry, 48, Band 48) - edition reliée, livre de poche

2001, ISBN: 9781402001598

Springer, Gebundene Ausgabe, Auflage: 2001, 578 Seiten, Publiziert: 2001-12-31T00:00:01Z, Produktgruppe: Buch, 4.81 kg, Chemie, Naturwissenschaften & Technik, Kategorien, Bücher, Material… Plus…

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Frontiers of High Pressure Research II: Application of High Pressure to Low-Dimensional Novel Electronic Materials (NATO Science Series II: Mathematics, Physics and Chemistry, 48) - edition reliée, livre de poche

2001

ISBN: 9781402001598

Editor: Hochheimer, Hans D. Editor: Kuchta, Bogdan, Editor: Dorhout, Peter K. Editor: Yarger, Jeffery L. Springer, Hardcover, Auflage: 2001, 578 Seiten, Publiziert: 2001-12-31T00:00:01Z, … Plus…

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Frontiers of High Pressure Research II: Application of High Pressure to Low-Dimensional Novel Electronic Materials - Hochheimer, Hans D. (Herausgeber); Yarger, Jeffery L. (Herausgeber); Dorhout, Peter K. (Herausgeber); Kuchta, Bogdan (Herausgeber)
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Hochheimer, Hans D. (Herausgeber); Yarger, Jeffery L. (Herausgeber); Dorhout, Peter K. (Herausgeber); Kuchta, Bogdan (Herausgeber):
Frontiers of High Pressure Research II: Application of High Pressure to Low-Dimensional Novel Electronic Materials - edition reliée, livre de poche

2001, ISBN: 1402001592

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Frontiers Of High Pressure Research Ii: Application Of High Pressure To Low-Dimensional Novel Electronic Materials - edition reliée, livre de poche

2001, ISBN: 1402001592

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Frontiers of High Pressure Research II: Application of High Pressure to Low-Dimensional Novel Electronic Materials: 48 (NATO Science Series II: Mathematics, Physics and Chemistry, 48)

The book contains research results on interesting, novel electronic materials and the influence of dimensionality on their properties. The materials covered include carbon nanotubes, polymeric fullerenes, colossal magnetoresistance (CMR) materials, molecular solids, semiconductors, 2-D impurity states, quantum dots, and high temperature superconductors. Material synthesis at high pressure as well as new developments in experimental techniques and novel experiments are emphasized. Readership: Researchers in the field of high pressure physics and chemistry and graduate students seeking information about the field.

Informations détaillées sur le livre - Frontiers of High Pressure Research II: Application of High Pressure to Low-Dimensional Novel Electronic Materials: 48 (NATO Science Series II: Mathematics, Physics and Chemistry, 48)


EAN (ISBN-13): 9781402001598
ISBN (ISBN-10): 1402001592
Version reliée
Livre de poche
Date de parution: 2001
Editeur: Springer
584 Pages
Poids: 1,029 kg
Langue: eng/Englisch

Livre dans la base de données depuis 2008-01-01T09:38:30+01:00 (Paris)
Page de détail modifiée en dernier sur 2024-03-17T10:27:09+01:00 (Paris)
ISBN/EAN: 9781402001598

ISBN - Autres types d'écriture:
1-4020-0159-2, 978-1-4020-0159-8
Autres types d'écriture et termes associés:
Auteur du livre: hochheimer, jeffery, höchheimer, dorhout, hans hochheim, peter hoch
Titre du livre: the physics high pressure, frontiers high pressure research, high and low, science frontiers, high pressure physics and chemistry, under pressure, application materials


Données de l'éditeur

Auteur: Hans D. Hochheimer; Bogdan Kuchta; Peter K. Dorhout; Jeffery L. Yarger
Titre: NATO Science Series II: Mathematics, Physics and Chemistry; Frontiers of High Pressure Research II: Application of High Pressure to Low-Dimensional Novel Electronic Materials
Editeur: Springer; Springer Netherland
557 Pages
Date de parution: 2001-12-31
Dordrecht; NL
Poids: 2,180 kg
Langue: Anglais
160,49 € (DE)
164,99 € (AT)
177,00 CHF (CH)
POD
XXI, 557 p. 80 illus.

BB; Inorganic Chemistry; Hardcover, Softcover / Chemie/Anorganische Chemie; Anorganische Chemie; Verstehen; Ion; carbon; carbon nanotube; chemistry; electronic material; fullerene; fullerenes; molecular solid; oxygen; polymer; quantum dot; semiconductor; silicon; spectroscopy; synthesis; Condensed Matter Physics; Organic Chemistry; Inorganic Chemistry; Condensed Matter Physics; Organic Chemistry; Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik); Organische Chemie; BC; EA

Contributors. Preface. Acknowledgements. Evangelos Anastassakis (1938-2000). Material Synthesis at High Pressures. Stabilization of Unusual Oxidation States of Transition Metals in Oxygen Lattices: Correlations with the Induced Electronic Phenomena; G. Demazeau. Synthesis and Properties of Low dimensional F-Element Chalocogenide Compounds; P.K. Dorhout, C.R. Evenson, IV. Synthesis and High-Pressure Behavior of C6N9H3·HCl: A graphitic material with a two-dimensional C-N network; G.H. Wolf, et al. Plasma Polymerization of Thin Films Using Aniline and p-Xylene Precursors; A. Dumitru, et al. Pressure-Induced Phase Transitions. Compressibility, Pressure-Induced Amorphisation and Thermal Collapse of Zeolites; G.N. Greaves. Pressure-induced H-transfers in the networks of hydrogen bonds; A. Katrusiak. The Light Elements at High Pressure, in Layered Form, and in Combination; N.W. Ashcroft. Pressure-induced Phase Transitions in GaSe-, TlGaSe2- and CdGa2S4-type Crystals; K.R. Allakhverdiev. Influence of Pressure on the Physical Properties of Chain TlSe-type Crystals; K.R. Allakhverdiev, S.S. Ellialtiogammalu. Impendance Spectroscopy at Super High Pressures; A.N. Babushkin, et al. Optical Properties of A2CuCl4 Layer Perovskites under Pressure: Structural Correlations; F. Rodríguez, et al. The Effect of Pressure-Induced Collapse of Correlation and Hund's Rules on Structure and Electronic Properties of Transition-Metal Compounds; M. Paz-Pasternak, et al. Pressure Tuning of Condensation and Ordering of Charge-Transfer Strings; H. Cailleau, et al. From Ferroelectric to Quantum Paraelectric: Ktal-xNbxO3(KTN), a Model System; G.A.Samara. Molecular Solids Under High Pressures. Quartz like phases in CO2 at very high pressure from ab initio simulations; R. Ahuja, et al. Progress in Experimental Studies of Insulator-Metal Transitions at Multimegabar Pressures; R.J. Hemley, et al. Solid Oxygen as Low dimensional System by Spectroscopic Studies; A. Brodyanski, et al. Evolution of Rotational Spectrum in Solid Hydrogen with Pressure: Implications for Conversion and other Properties; M.A. Strzhemechny. An Influence of the Pressure on Metastability of the HCP Phase of Solid Nitrogen; B. Kuchta, et al. Semiconductors, 2-D Impurity States, Quantum Dots. X-ray Study of Strain Relaxation in Heteroepitaxial Layers of Semiconductors Annealed under High Hydrostatic Pressure; J. Bak-Misiuk. Application of High Temperature-Pressure Treatment for Investigation of Defect Creation in Basic Materials of Modern Micro-electronics: Czochralski Silicon and Solicon Containing Films; A. Misiuk. Pressure-induced Phase Transformations in Semiconductors under Contact Loading; V. Domnich, Y. Gogotsi. Far-Infrared Spectroscopy of Quasi-2D Impurity States in Semiconductor Nanostructures under High Hydrostatic Pressure; B.A. Weinstein, et al. Probing the Effects of Three-Dimensional Confinement on the Electronic Structure of InP under Hydrostatic Pressure; C.S. Menoni, et al. Pressure Studies in InGaN/GaN Quantum Wells; D. Patel, et al. Superconductivity. What High Pressure Studies Have Taught Us about High-Temperature Superconductivity; J.S. Schilling. Anisotropic Low-Dimensional Superconductors Close to an Electronic Topological Transition; G.G.N. Angilella, et al. Pressure-Induced Superconducting Phase Separation in Oxygen-Doped La2-xSrxCuO4+&dg
Proceedings of the NATO Advanced Research Workshop, Pingree Park, CO, USA, from 10-15 June 2001

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